Atanu Betal
Jodhpur, Rajasthan| Grant Category: | Fulbright-Nehru Postdoctoral Research Fellowships |
| Project Title: | Sub-nanometer Channel Length Vertical Organic FET (VOFET) for high-performance Neuromorphic applications |
| Field of Study: | Physical Sciences |
| Home Institution: | Indian Institute of Technology (IIT) Jodhpur, Jodhpur, Rajasthan |
| Host Institution: | Georgia Institute of Technology , Atlanta, GA |
| Grant Start Month: | March 2025 |
| Duration of Grant: | Twelve months |
Brief Bio:
Dr. Atanu Betal is a postdoctoral fellow at the Department of Electrical Engineering, University of Sherbrooke, Quebec, Canada. He earned his BSc in 2014 from Garhbeta College, affiliated with Vidyasagar University, West Bengal, and completed his MSc in 2017 at Guru Ghasidas Vishwavidyalaya, Bilaspur, Chhattisgarh. In September 2023, he was awarded a PhD from the Indian Institute of Technology, Jodhpur. He was a Senior Research Fellow from January 2024 to March 2024 at IITJ.
Dr. Betal’s research interests are in the field of experimental condensed matter physics, primarily focused on the fabrication of resistive memory, neuromorphic synaptic devices using organic materials, and scanning tunneling microscopy of low-dimensional materials. He has published 34 research articles (eight as the first author and 26 as a co-author) in reputable international journals.
As a Fulbright-Nehru Postdoctoral Research Fellow at GIT, Georgia, Dr. Betal is focusing on the fabrication of vertical FETs and their application in neuromorphic synaptic devices — an area of growing interest among scientists for advancing artificial intelligence hardware. During his fellowship, Dr. Betal aims to explore different organic semiconducting materials for the FET with sub-nanometer channel length.